THN5601B Datasheet, PDF (3/7 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

THN5601B
□ Electrical Characteristics (T_A = 25 ℃, unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Maximun Available Gain
Reverse Transfer Capacitance
I_CBO
I_CEO
I_EBO
h_FE
f_T
|S₂₁|²
MAG
C_re
V_CB = 19 V, I_E = 0 mA
V_CE = 8 V, I_B = 0 mA
V_EB = 1.5 V, I_C = 0 mA
V_CE = 4.8 V, I_C = 60 mA
V_CE = 4.8 V, I_C = 100 mA
V_CE = 4.8 V, I_C = 100 mA, f = 1 GHz
V_CE = 4.8 V, I_C = 100 mA, f = 1 GHz
V_CB = 4.8 V, I_E = 0mA, f = 1 MHz
Min. Typ. Max.
0.5
10
1.0
60
300
4.2
Unit
㎂
㎂
㎂
GHz
dB
dB
pF
□ h_FE Classification
Marking
h_FE Value
R1401
60 - 200
R1401^·
170 - 300
DC Current Gain
vs. Collector Current
Reverse Transfer Capacitance
vs. Collector to Base Voltage
200
180 V = 4.8 V
CE
160
140
120
100
80
60
40
20
0
10^-3
10^-2
10^-1
10⁰
Collector Current, I (A)
C
7
f = 1 MHz
6
5
4
3
0
2
4
6
8 10
Collector to Base Voltage, V (V)
CB
3