THN5601B Datasheet, PDF (4/7 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

THN5601B
□ Application Information (I)
RF performance at Ts ≤ 60 ℃ in common emitter test circuit
Mode of Operation
CW, class-AB
f [MHz]
900
V_CE [V]
4.8
P_OUT [mW]
600
G_P [dB]
≥7
η_C [%]
≥ 60
Power Gain and Collector Efficiency
vs. Output Power
Output Power
vs. Input Power
12
f = 900 MHz, V = 4.8 V, I = 5 mA
CE
CQ
10
G
P
8
6
η
C
4
2
5 10 15 20 25 30
Output Power, P (dBm)
OUT
100
90
80
70
60
50
40
30
20
10
0
35
35
f = 900 MHz, V = .48 V, I = 5 mA
CE
CQ
30
25
20
15
10
5
0
5 10 15 20 25
Input Power, P (dBm)
IN
Typical Large Signal Impedance
At V_CE = 4.8 V, I_CQ = 5 mA, P_OUT = 28 dBm
Freq.[MHz]
Γ source
Mag
800
0.615
820
0.631
840
0.65
860
0.666
880
0.682
900
0.698
920
0.711
940
0.724
960
0.735
980
0.746
1000
0.760
Ang
-162.5
-164
-165.9
-167.6
-169.5
-171.2
-172.7
-174.5
-175.9
-177.6
-179.3
Mag
0.460
0.478
0.494
0.509
0.524
0.538
0.550
0.563
0.578
0.593
0.600
Γ load
Ang
161.4
159.6
158.0
156.2
154.0
151.9
150.0
147.3
145.0
142.8
140.3
4