THN6701B Datasheet, PDF (4/6 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

THN6701B
□ Application Information
RF performance at T_S ≤ 60 ℃ in common emitter configuration
Operation Mode
CW, class-AB
f (MHz)
465
V_CE (V)
6
P_OUT (dBm)
35
G_P (dB)
≥ 10
PAE (%)
60
Output Power or Power Gain
vs. Input Power
45
20
f = 465 MHz, V = 6 V, I = 50 mA
CC
CQ
40
18
35
G
P
P
OUT
16
30
14
25
12
20
10
15
8
10
6
0 5 10 15 20 25 30
Input Power, P (dBm)
IN
Collector Current or Power Added Efficiency
vs. Input Power
1.6
f = 465 MHz, V = 6 V, I = 50 mA
CC
CQ
1.4
1.2
PAE
1.0
0.8
I
0.6
C
0.4
0.2
0.0
0
5 10 15 20 25
Input Power, P (dBm)
IN
80
70
60
50
40
30
20
10
0
30
4