THN6701B Datasheet, PDF (1/6 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

Semiconductor
□ Applications
- VHF and UHF power amplifier
□ Features
- High power gain
G_P = 14 dB at V_CE = 6 V, I_C = 400 mA, f = 465 MHz
- High power
P_OUT = 35 dBm(3W) at V_CE = 6 V, I_CQ = 50 mA, f = 465 MHz
THN6701B
SiGe NPN Transistor
SOT-223
Unit in mm
6.5
3.0
4
1
23
2.3
0.7
4.6
Pin Configuration
1. Base
2. Emitter
3. Collector
4. Emitter
□ Absolute Maximum Ratings (T_A = 25 ℃)
Param eter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Sym bol
BV_CBO
BV_CEO
BV_EBO
I_C
P_tot
T_j
T_stg
Ratings
17
12
1.5
1
3
150
-65 ~ 150
Unit
V
V
V
A
W
℃
℃
1