THN6701B Datasheet, PDF (3/6 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

THN6701B
□ Typical Characteristics ( T_A = 25℃, unless otherwise specified)
Total Power Dissipation vs.
Ambient Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25 50 75 100 125 150
Ambient Temperature, T (oC)
A
Reverse Transfer Capacitance
vs. Collector to Base Voltage
10
9 f = 1 MHz
8
7
6
5
4
3
2
1
0
0
2
4
6
8 10
Collector to Base Voltage, V (V)
CB
DC Current Gain
vs. Collector Current
100
V =6V
CE
80
60
40
20
0
10^-2
10^-1
10⁰
Collector Current, I (A)
C
Collector Current
vs. Collector to Emitter Voltage
0.5
I = 10 mA
0.4
B
I = 7.5 mA
0.3
B
I = 5 mA
0.2
B
I = 2.5 mA
0.1
B
0.0
0
2
4
6
8
10
Collector to Emitter Voltage, V (V)
CE
3