THN6701B Datasheet, PDF (2/6 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

THN6701B
□ Thermal Characteristics
Symbol
Rth j-a
Parameter
Thermal Resistance from Junction to Ambient
Value
Unit
40
K/W
□ Electrical Characteristics (T_A = 25 ℃)
Parameter
Symbol
Test Conditions
Min.
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Output Power
Power Gain
Power Added Efficiency
I_CBO
V_CB = 15 V, I_E = 0 mA
-
I_CEO
V_CE = 11 V, I_B = 0 mA
-
I_EBO
V_EB = 1.0 V, I_C = 0 mA
-
h_FE
V_CE = 6 V, I_C = 200 mA
20
C_re
V_CB = 6 V, I_E = 0 mA, f = 1 MHz
-
P_OUT
V_CE = 6 V, I_CQ = 50 mA, f = 465 MHz,
-
P_IN = 25 dBm
G_P
-
PAE
-
Typ. Max.
-
1.0
-
5.0
-
1.0
-
200
4.5
-
35
-
10
-
60
-
Unit
㎂
㎂
㎂
pF
dBm
dB
%
□ h_FE Classification
Marking
h_FE Value
R6701
20 - 100
R6701^·
80 - 200
2