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PS-AT17LV010 Datasheet, PDF (8/15 Pages) ATMEL Corporation – MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1 MEGABIT SERIAL EEPROM, MONOLITHIC SILICON
PS-AT17LV010
Rev A
TABLE I. Electrical performance characteristics.
Test
High level input
voltage
Low level input
voltage
High level output
voltage
Low level output
voltage
Low level Input
current
High level Input
current
Supply current
Active mode
Supply current
Standby mode
Input
capacitance
Output
capacitance
Maximum clock
frequency
CE setup time
to CLK (to
guarantee
proper counting)
CE hold time to
CLK (to
guarantee
proper counting)
CLK low time
CLH high time
OE high time (to
guarantee
counter is reset)
OE to data delay
(1)
CLK to data
delay (1)
Data hold from
CE , OE or CLK
CE or OE to
data float delay
(2)
CE to data
delay (1)
Sym
bol
VIH
VIL
VOH
VOL
IIL
IIH
ICCA
ICCS
CIN
COUT
FMAX
TSCE
THCE
TLC
THC
THOE
TOE
TCAC
TOH
TDF
TCE
Test
method Mil-
Std-883
3013
3013
3007
3007
3009
3009
3005
3005
3012
3012
3003
3003
3003
3003
3003
3003
3003
3003
3003
3003
Conditions
-55°C ≤ TC ≤ +125°C
+3 V ≤ VDD ≤ +3.6 V
unless otherwise specified
VDD = 3.6 V
VDD = 3.0 V
VDD =3 V, IOH = -2 mA VSS =0V
VDD =3 V, IOL = 3 mA VSS =0V
VIN =0 VDD = 3.6V VSS =0V
VIN =VDD = 3.6V VSS =0V
VDD = 3.6V VSS =0V
VDD = 3.6V VSS =0V
VIN = 0 V VSS =0V
TC = 25°C
fIN = 1.0 MHz
VOUT = 0 V VSS =0V
TC = 25°C
fIN = 1.0 MHz
VDD = 3 V &VDD = 3.6 V, FMAX
VDD = 3 V &VDD = 3.6 V, FMAX
VDD = 3 V &VDD = 3.6 V, FMAX
VDD = 3 V &VDD = 3.6 V, FMAX
VDD = 3 V &VDD = 3.6 V, FMAX
VDD = 3 V &VDD = 3.6 V, FMAX
VDD = 3 V &VDD = 3.6 V, FMAX
VDD = 3 V &VDD = 3.6 V, FMAX
VDD = 3 V &VDD = 3.6 V, FMAX
VDD = 3 V &VDD = 3.6 V, FMAX
Limits
Unit
Min Max
2
V
0.8 V
2.4
V
0.4 V
-10
μA
10 μA
5 mA
150 µA
12 pF
Note
4
4
3
3
3
3
3
3
5
12 pF
5
10 MHz
35
ns
3
0
ns
3
25
ns
4
25
ns
4
4
25
ns
55 ns
3
60 ns
3
3, 6
0
ns
50 ns
4
60 ns
3
Sheet 8 / 15