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| PS-AT17LV010 Datasheet, PDF (4/15 Pages) ATMEL Corporation – MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1 MEGABIT SERIAL EEPROM, MONOLITHIC SILICON | |||
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PS-AT17LV010
Rev A
1 GENERAL
1.1 Scope
This specification details the ratings, physical and electrical characteristics, tests and inspection
data of the 1 megabit serial EEPROM named AT17LV010. It also defines the specific requirement for
space and military applications with high reliability.
1.2 Identification
Part number
AT17LV010-10DP-MQ
AT17LV010-10DP-SV
Description
1 megabit
serial eeprom
1 megabit
serial eeprom
Access
Time
60ns
60ns
Case
Application
Flat pack 400 mils
28 leads
Flat pack 400 mils
28 leads
Military
application
Space
application
1.3 Absolute maximum ratings
Supply voltage range (VDD) ................................................ -0.5V to 7V
Output voltage range (VOUT)............................................... -0.1V dc to VDD + 0.5V dc
Power dissipation (Pd) ....................................................... 0,1W
Storage temperature .......................................................... -65°C to 150°C
Maximum junction temperature (TJ) ................................... 175°C
Thermal resistance junction to case (Îjc) :........................ 9°C/W
Lead temperature (soldering @ 1/16 in, 10 s) ................... 260°C
Endurance.......................................................................... 50,000 write cycles
Data retention .................................................................... 10 years
1.4 Recommended operating conditions.
Supply voltage range (VDD) ................................................ 3 V dc to 3.6 V dc
Ambient operating temperature (TA) ................................. -55°C to 125°C
Storage temperature .......................................................... 30°C, 20 to 65% RH, dust free, original packing
1.5 Radiation features
Tested up to a Total Dose of (according to MIL STD 883 Method 1019) :
(dose rate 0.1 rad/s).......................................................... 20 kRads (Si) Read Only Mode, when biased
........... 60 kRads (Si) Read Only Mode, when un-biased
No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2
1.6 Handling precautions
These components are susceptible to damage by electrostatic discharge. Therefore, suitable
precautions shall be employed for protection during all phases of manufacturing, testing, shipment and any
handling.
ESD (Rzap = 1.5 kΩ, Czap = 100 pF) ............................... 2000 V (class 3)
Sheet 4 / 15
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