AT24C04B_09 Datasheet, PDF (4/28 Pages) ATMEL Corporation – Two-wire Serial EEPROM

2. Memory Organization
AT24C04B, 4K SERIAL EEPROM: Internally organized with 32 pages of 16 bytes each, the 4K requires a 9-bit data
word address for random word addressing.
AT24C08B, 8K SERIAL EEPROM: Internally organized with 64 pages of 16 bytes each, the 8K requires a 10-bit
data word address for random word addressing.
Table 2. Pin Capacitance⁽¹⁾
Applicable
over
recommended
operating
range
from
T_A
=
25°C,
f
=
1.0
MHz,
V
CC
=
+1.8V
Symbol
Test Condition
Max
C_I/O
Input/Output Capacitance (SDA)
8
C_IN
Input Capacitance (A₀, A₁, A₂, SCL)
6
Note: 1. This parameter is characterized and is not 100% tested.
Units
pF
pF
Conditions
V_I/O = 0V
V_IN = 0V
Table 3. DC Characteristics
Applicable over recommended operating range from:
T_AI = –40°C to +85°C, V_CC = +1.8V to +5.5V (unless otherwise noted)
Symbol
Parameter
Test Condition
V_CC1
Supply Voltage
V_CC2
Supply Voltage
V_CC3
Supply Voltage
V_CC4
Supply Voltage
I_CC
Supply Current V_CC = 5.0V
I_CC
Supply Current V_CC = 5.0V
I_SB1
Supply Current V_CC = 1.8V
I_SB2
Supply Current V_CC = 2.5V
I_SB3
Supply Current V_CC = 2.7V
I_SB4
Supply Current V_CC = 5.0V
I_LI
Input Leakage Current
I_LO
Output Leakage Current
V_IL
Input Low Level⁽¹⁾
V_IH
Input High Level⁽¹⁾
V_OL2
Output Low Level V_CC = 3.0V
V_OL1
Output Low Level V_CC = 1.8V
READ at 100 kHz
WRITE at 100 kHz
V_IN = V_CC or V_SS
V_IN = V_CC or V_SS
V_IN = V_CC or V_SS
V_IN = V_CC or V_SS
V_IN = V_CC or V_SS
V_OUT = V_CC or V_SS
I_OL = 2.1 mA
I_OL = 0.15 mA
Note: 1. V min and V max are reference only and are not tested.
IL
IH
Min
1.8
2.5
2.7
4.5
- 0.6
V_CC x 0.7
Typ
0.4
2.0
0.6
1.4
1.6
8.0
0.10
0.05
Max
5.5
5.5
5.5
5.5
1.0
3.0
3.0
4.0
4.0
18.0
3.0
3.0
V_CC x 0.3
V_CC + 0.5
0.4
0.2
Units
V
V
V
V
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
4 AT24C04B/08B
5226G–SEEPR–11/09