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TH7834C Datasheet, PDF (11/13 Pages) ATMEL Corporation – Very Highresolution Linear CCD Image Sensor (12000 Pixels)
Exposure Time
Reduction (See
Figure 8)
1997A–IMAGE–05/02
TH7834C
Figure 6. Typical Spectral Responsitivity
8.0
η=0.8
η=0.7
7.2
η=0.6
6.4
5.6
4.8
4.0
3.2
2.4
1.6
0.8
0
400 500 600 700 800 900 1000 1100
Lambda (nm)
Figure 7. VSAT versus ΦA Low Level Typical Curve
Antiblooming
OFF
Antiblooming
ON
3600
3400
3200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
VST = 4 V
ΦR Low level = 1.5V
VA = 13V
1 2 3 4 5 6 7 8 8.5
ΦA bias (V)
TH7834 allows a reduction in the exposure time without changing the readout time. It
thus provides a function which is equivalent to an optical iris.
The exposure time reduction consists in increasing the ΦA gate bias in order to remove
continuously, during period 2, the photoelectrons from the pixel and to inject them into
the antiblooming diode VA. When ΦA returns to the normal bias, electrons are integrated
in the pixel.
Only excess electrons are evacuated into VA (blooming control). Thus, the actual inte-
gration time is ti instead of Ti, without any change in the readout sequence. Register
transfer and reset clocks (ΦL, ΦLS and ΦR) must be pulsed during the Ti integration time.
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