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| TH7834C Datasheet, PDF (10/13 Pages) ATMEL Corporation – Very Highresolution Linear CCD Image Sensor (12000 Pixels) | |||
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Electro-optical
Performance
⢠General measurement conditions: Tc = 25°C; Ti = 1 ms; FΦLA, FΦLB, FΦLC, FΦLD =
5 MHz, readout through 4 outputs.
⢠Light source: tungsten filament lamp (2,854 K) + BG 38 filter (2 mm thick) + F/3.5
aperture. The BG 38 filter limits the spectrum to 700 nm. In these conditions,
1 µJ/cm2 corresponds to 3.5 lux.s.
⢠Typical operating conditions (see Table 1, 2, 3 and 4). First and last pixels of the
photosensitive line, as well as reference elements, are excluded from the
specification.
⢠Test without antiblooming, except for AE max.
Table 6. Electro-optical Performance
Value
Parameter
Symbol
Min.
Typ.
Max.
Unit
Remarks
Saturation Output Voltage With
Antiblooming OFF
Saturation Exposure
Responsitivity
VSAT
2
3
ESAT
0.6
R
3.5
5
V
µJ/cm2
V/µJ/cm2
(1)(2)(3)
Photo Response Non-uniformity
Excluding Single Defects
PRNU
±6
± 10
% VOS
VOS = 1.0V(4)
Contrast Transfer Function At Nyquist
Frequency (77 Ip/mm)
at 500 nm
75
at 600 nm
CTF
62
at 700 nm
47
Temporal Noise In Darkness (rms)
300
%
VOS = 1.5V
%
For white level
%
µV
(5)
Dynamic Range (Relative to rms
Noise)
Pixel Average Dark Signal
Dark Signal Non-uniformity
DR
VDS
DSNU
10000
110
250
µV/ms
(6)
90
400
µV/ms
Peak to peak(6)
Register Single Stage Transfer
Efficiency
1-ε
0.99998
0.999998
VOS = 1V
Lag (Vertical Charge Transfer
Efficiency)
VCTE
0.1
0.5
%
(7)
Antiblooming Efficiency
AE max
<1
15
mV
(8)
Notes:
1. Value measured with respect to zero reference level.
2. Conversion factor is typically: 6 µV/e-.
3. Without antiblooming: ΦA1-2 = ΦA3-4 = 0V.
4. VOS = average output voltage; PRNU for each output, in 4 output operating mode.
5. Measured in Correlated Double Sampling (C.D.S.) mode.
6. VDS and DSNU vary with temperature.
7. Residual signal after line readout, at VOS= 1V.
8. Line acquisition with Phi-A at high level. AE max = maximum signal along the line (to test all the antiblooming sites).
10 TH7834C
1997AâIMAGEâ05/02
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