AST54S_17 Datasheet, PDF (25/26 Pages) Advanced Semiconductor Business Inc. – High Gain, Low Noise Amplifier

APPLICATION CIRCUIT
Trans-impedance Amplifier
50 
50 ~ 2500 MHz
+5 V
AST54S
High Gain, Low Noise Amplifier
Parameter
Symbol
Power Gain
Output Return Loss
EIN
3^rd Intercept Point
Output Power¹⁾
Circuit Current
Gp
RLout
EIN
OIP3
Id
Unit
dB
dB
pA/rtHz
dBm
mA
Frequency (MHz)
50
200 950
18.9 17.1 15.3
-10 -4
-6
8.2 6.0 5.8
16¹⁾
16¹⁾
12²⁾
30
1) OIP3 is measured with two tones at an output power of -12 dBm/tone separated by 1MHz.
2) OIP3 is measured with two tones at an output power of -16 dBm/tone separated by 1MHz.
3) OIP3 is measured with two tones at an output power of -18 dBm/tone separated by 1MHz.
4) OIP3 is measured with two tones at an output power of -20 dBm/tone separated by 1MHz.
2150
14.9
-5
5.1
7³⁾
2500
17.5
-9
8.5
3⁴⁾
Schematic
Vdiode=+5 V
C8=10 F
R6=0 
R7=0 
R3=560 
L5=5.6 nH
R8=200 
C1=1 nF
C2=1 nF
C5=1 nF
R9=200 
L3
(BLM15HD182SN)
C4=0.5 pF
L1=180 nH
(Coil Inductor)
C6=10 nF
AST54S
R2=5.1 k
R5=8.2  C3=1 nF _{RF OUT}
L2=120 nH
(Coil Inductor)
C7=1 F
L4
(BLM15HD182SN)
R1=750 
R4=62 
Board Layout (FR4, 24x16 mm², 0.8T)
+Vd+iVoddeiode
GNGDND
Cathode
Cathode
Anode
Anode
Ph^Po^hto^od^tio^od^de^iode
ASB Inc.
AS_hB_ttI_pn_:c_//._{www.asb.co.kr}
http_E:/_B/w_-3w₆w₃._-a_Dsb₃.co.kr
EB-363-D3
+Vdevice
+Vdevice
GND
GND
S-parameters
30
Vsupply=+5 V
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
0
-5
-10
-15
-20
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
25/26
ASB Inc.  [e-mail]  Tel: [phone]
April 2017