AST54S_17 Datasheet, PDF (11/26 Pages) Advanced Semiconductor Business Inc. – High Gain, Low Noise Amplifier

AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
WCDMA
S11 < -18 dB &
High Gain
2000 MHz
+5 V
Schematic
Parameter
Symbol Test Conditions
TYP.
Power Gain
Gp
F = 2 GHz
14.5 14.6
Noise Figure
NF
F = 2 GHz
0.6
0.6
Input Return Loss
RLin
F = 2 GHz
-18
-18
Output Return Loss
RLout
F = 2 GHz
-12
-12
1 dB Gain Compression
Output Power
3^rd Intercept Point
Output Power¹⁾
Circuit Current
Po(1dB)
OIP3
Id
F = 2 GHz
F = 2 GHz
F = 2 GHz
Non-RF
19
20
34
36
40
60
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Unit
dB
dB
dB
dB
dBm
dBm
mA
Board Layout (FR4, 23x13 mm², 0.8T)
Top
Bottom
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 0.75 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
5
-40^oc
0
25^oc
85^oc
-5
-10
-15
-20
0
0
-5
-10
500
1000 1500 2000 2500 3000 3500
Frequency (MHz)
-40^oc
25^oc
85^oc
30
25
-40^oc
25^oc
20
85^oc
15
10
5
0
0
500
1000 1500 2000 2500 3000 3500
Frequency (MHz)
5
4
3
-15
2
-20
1
11/26
-25
0
500
1000 1500 2000 2500 3000 3500
Frequency (MHz)
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [e-mail]  Tel: [phone]
April 2017