AST54S_17 Datasheet, PDF (17/26 Pages) Advanced Semiconductor Business Inc. – High Gain, Low Noise Amplifier

AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
LTE 2600
2600 ~ 2700 MHz
+5 V
Schematic
Parameter
Symbol Unit
Frequency
2600 2700
Power Gain
Gp
dB
13.5 13.2
Noise Figure
NF
dB
0.6
0.6
Input Return Loss
RLin
dB
-18
-18
Output Return Loss
1 dB Gain Compression
Output Power
3^rd Intercept Point
Output Power¹⁾
Circuit Current
RLout
dB
-10
-10
Po(1dB)
dBm 19
19
OIP3 dBm 32
34
Id
mA 40
40
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Frequency
2600 2700
13.6 13.3
0.6
0.6
-18
-18
-10
-10
20
20
34
34
60
60
VDD
C7=1 uF
Board Layout (FR4, 23x13 mm², 0.8T)
Top
C4=1 nF
R1=820 
R3=43  @ 40 mA,
27 @ 60 mA
RF IN
C1=22 pF
C3=0.75 pF
R2=5.1 k
L1=10 nH
AST54S
C6=2 pF
L2=12 nH
C2=22 pF RF OUT
Bottom
C5=1 nF
R4=3.3 k
S-parameters & K-factor
20
15
10
5
0
2300
0
2400
2500 2600 2700 2800
Frequency (MHz)
2900
3000
0
-5
-10
-15
-20
-25
-30
2300
5
2400
2500 2600 2700 2800
Frequency (MHz)
2900
3000
-5
4
-10
3
-15
2
-20
1
17/26
-25
2300
2400
2500 2600 2700 2800
Frequency (MHz)
2900
3000
0
0
500
ASB Inc.  [e-mail]  Tel: [phone]
1000
1500
2000
2500
Frequency (MHz)
3000
3500
April 2017