AST54S_17 Datasheet, PDF (10/26 Pages) Advanced Semiconductor Business Inc. – High Gain, Low Noise Amplifier

AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
WCDMA
S11 < -18 dB &
Low Noise
2000 MHz
+5 V
Schematic
Parameter
Symbol Test Conditions
TYP.
Power Gain
Gp
F = 2 GHz
12.8 12.9
Noise Figure
NF
F = 2 GHz
0.5
0.5
Input Return Loss
RLin
F = 2 GHz
-18
-18
Output Return Loss
RLout
F = 2 GHz
-10
-10
1 dB Gain Compression
Output Power
3^rd Intercept Point
Output Power¹⁾
Circuit Current
Po(1dB)
OIP3
Id
F = 2 GHz
F = 2 GHz
F = 2 GHz
Non-RF
19
20
34
36
40
60
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Unit
dB
dB
dB
dB
dBm
dBm
mA
Board Layout (FR4, 23x13 mm², 0.8T)
Top
Bottom
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 2.2 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
20
0
-5
15
-10
10
-15
5
-20
0
1700
0
1800
1900
2000
2100
Frequency (MHz)
2200
2300
-25
1700
5
1800
1900
2000
2100
Frequency (MHz)
2200
2300
4
-5
3
-10
2
-15
1
10/26
-20
1700
1800
1900
2000
2100
Frequency (MHz)
2200
2300
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [e-mail]  Tel: [phone]
April 2017