AMD533CE Datasheet, PDF (6/7 Pages) Analog Power – P & N-Channel 30-V (D-S) MOSFET

Analog Power
AMD533CE
Typical Electrical Characteristics (P-Channel)
100
10 ^{VGS =0V}
1
TA = 125^oC
0.1
25^oC
0.01
0.001
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
2.2
VDS = VGS
2
ID = -250mA
1.8
1.6
1.4
1.2
1
-50 -25 0 25 50 75 100 125 150 175
TA, AMBIENT TEMPERATURE (^oC)
0.25
ID = -5.7A
0.2
0.15
0.1
0.05
0
2
TA = 25^oC
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 8. On-Resistance with Gate to Source Voltage
50
SINGLE PULSE
RqJA = 125C/W
40
TA = 25C
30
20
10
0
0.001 0.01
0.1
1
10
t1, TIME (sec)
100 1000
Figure 9. Vth Gate to Source Voltage Vs Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1 _{D =0.5}
0.2
0.1
0.1 _0.05
0.02
0.01 _0.01
0.001
0.0001
S INGLE P ULS E
0.001
0.01
0.1
1
10
t1 , TIM E (s ec)
Figure 11. Transient Thermal Response Curve
RqJA(t) = r(t) + RqJA
RqJA = 125^oC/W
P (pk)
t1
t2
TJ - TA = P * Rq JA(t)
Duty Cycle, D = t 1 / t 2
100
1000
PRELIMINARY
6
Publication Order Number:
DS-AMD533CE_D