AMD533CE Datasheet, PDF (3/7 Pages) Analog Power – P & N-Channel 30-V (D-S) MOSFET

Analog Power
AMD533CE
Typical Electrical Characteristics (N-Channel)
30
VGS = 10V
25
6.0V
20 5.0V
15
10
4.0V
3.0V
5
0
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2.5
2
1.5
4.5V
6.0V
1
10V
0.5
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 3. On Resistance Vs Vgs Voltage
30
VDS = 5V
25
20
TA = -55^oC
25^oC
125^oC
15
10
5
0
0.5
1.5
2.5
3.5
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 2. Body Diode Forward Voltage Variation
with Source Current and Temperature
1500
1200
f = 1MHz
VGS = 0 V
CISS
900
600
COSS
300
0
0
CRSS
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 4. Capacitance Characteristics
10
ID = 7A
8
15V
6
4
2
0
0
3
6
9
12
15
Qg, GATE CHARGE (nC)
Figure 5. Gate Charge Characteristics
1.6
V_GS = 10V
1.4 ^{ID = 7A}
1.2
1.0
0 .8
0 .6
-50
-2 5 0 2 5 50 75 10 0 12 5 150
T_J Juncation Temperature ( )
Figure 6. On-Resistance Variation with Temperature
PRELIMINARY
3
Publication Order Number:
DS-AMD533CE_D