AMD533CE Datasheet, PDF (5/7 Pages) Analog Power – P & N-Channel 30-V (D-S) MOSFET

Analog Power
AMD533CE
Typical Electrical Characteristics (P-Channel)
30
VGS = -10V
-6.0V
-5.0V
20
-4.0V
10
-3.0V
0
0
1
2
3
4
5
6
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2
1.8
1.6
-4.5V
1.4
-6.0V
1.2
-10V
1
0.8
0
6
12
18
24
30
-ID, DRAIN CURRENT (A)
Figure 3. On Resistance Vs Vgs Voltage
10
ID = -5.7A
8
6
-15V
4
2
0
0
2
4
6
8
10
Qg, GATE CHARGE (nC)
Figure 5. Gate Charge Characteristics
15
VDS = -5V
12
9
TA = -55^oC
25^oC
125^oC
6
3
0
1 1.5 2 2.5 3 3.5 4 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 2. Body Diode Forward Voltage Variation
with Source Current and Temperature
800
700
f = 1 MHz
VGS = 0 V
600
CISS
500
400
300
COSS
200
100
CRSS
0
0
5
10
15
20
25
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 4. Capacitance Characteristics
1.6
VGS = 10V
1.4 ^{ID = 5.7A}
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ Juncation Temperature (C)
Figure 6. On-Resistance Variation with Temperature
PRELIMINARY
5
Publication Order Number:
DS-AMD533CE_D