AMD533CE Datasheet, PDF (1/7 Pages) Analog Power – P & N-Channel 30-V (D-S) MOSFET

Analog Power
AMD533CE
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
30
45 @ V_GS = 4.5V
35 @ V_GS = 10V
-30
70 @ V_GS = -4.5V
52 @ V_GS = -10V
I_D (A)
29
36
-20
-26
•
Low r_DS(on) provides higher efficiency and
extends battery life
D₁
S
2
• Low thermal impedance copper leadframe
DPAK saves board space
G
G
1
2
• Fast switching speed
• High performance trench technology
S1 G1 D S2 G2
S
1
N-Channel MOSFET
D₂
P-Channel MOSFET
ESD Protected
2000V
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
-30
V
V_GS
±20
±20
Continuous Drain Current^a
T_A=25^oC
T_A=70^oC
I_D
36
-26
30
-21
A
Pulsed Drain Current^b
I_DM
40
-40
Continuous Source Current (Diode Conduction)^a
I_S
30
-30
A
Power Dissipation^a
T_A=25^oC ^PD
50
50
W
Operating Junction and Storage Temperature Range T_J, T_stg
-55 to 175
o_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
R_θJA
Maximum Junction-to-Case
R_θJC
Maximum
50
3.0
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AMD533CE_D