HY62WT08081E Datasheet, PDF (6/13 Pages) Hynix Semiconductor – HY62WT08081E Series 32Kx8bit CMOS SRAM

HY62WT08081E Series
AC CHARACTERISTICS
Vcc = 5V ±10%, TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) / -40°C to 85°C (Industrial)
unless otherwise specified.
# Symbol
Parameter
-55
-70
Unit
Min. Max. Min. Max.
READ CYCLE
1 tRC Read Cycle Time
55
-
70
- ns
2 tAA
Address Access Time
-
55
-
70 ns
3 tACS Chip Select Access Time
-
55
-
70 ns
4 tOE Output Enable to Output Valid
-
25
-
35 ns
5 tCLZ Chip Select to Output in Low Z
10
-
10
- ns
6 tOLZ Output Enable to Output in Low Z
5
-
5
- ns
7 tCHZ Chip Disable to Output in High Z
0
20
0
30 ns
8 tOHZ Out Disable to Output in High Z
0
20
0
30 ns
9 tOH Output Hold from Address Change
5
-
5
- ns
WRITE CYCLE
10 tWC Write Cycle Time
55
-
70
- ns
11 tCW Chip Selection to End of Write
45
-
60
- ns
12 tAW Address Valid to End of Write
45
-
60
- ns
13 tAS
Address Set-up Time
0
-
0
- ns
14 tWP Write Pulse Width
40
-
50
- ns
15 tWR Write Recovery Time
0
-
0
- ns
16 tWHZ Write to Output in High Z
0
20
0
25 ns
17 tDW Data to Write Time Overlap
25
-
30
- ns
18 tDH Data Hold from Write Time
0
-
0
- ns
19 tOW Output Active from End of Write
5
-
5
- ns
Vcc = 2.7~3.6V, TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) / -40°C to 85°C (Industrial)
unless otherwise specified.
# Symbol
Parameter
-70*
-85
Unit
Min. Max. Min Max.
READ CYCLE
1 tRC Read Cycle Time
70
-
85
- ns
2 tAA
Address Access Time
-
70
-
85 ns
3 tACS Chip Select Access Time
-
70
-
85 ns
4 tOE Output Enable to Output Valid
-
35
-
45 ns
5 tCLZ Chip Select to Output in Low Z
10
-
10
- ns
6 tOLZ Output Enable to Output in Low Z
5
-
5
- ns
7 tCHZ Chip Disable to Output in High Z
0
30
0
30 ns
8 tOHZ Out Disable to Output in High Z
0
30
0
30 ns
9 tOH Output Hold from Address Change
5
-
5
- ns
WRITE CYCLE
10 tWC Write Cycle Time
70
-
85
- ns
11 tCW Chip Selection to End of Write
60
-
75
- ns
12 tAW Address Valid to End of Write
60
-
75
- ns
13 tAS
Address Set-up Time
0
-
0
- ns
14 tWP Write Pulse Width
50
-
60
- ns
15 tWR Write Recovery Time
0
-
0
- ns
16 tWHZ Write to Output in High Z
0
25
0
30 ns
17 tDW Data to Write Time Overlap
30
-
40
- ns
18 tDH Data Hold from Write Time
0
-
0
- ns
19 tOW Output Active from End of Write
5
-
5
- ns
Note * 70ns is available with 30pF test load
Rev 04 / May. 2001
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