HY62WT08081E Datasheet, PDF (3/13 Pages) Hynix Semiconductor – HY62WT08081E Series 32Kx8bit CMOS SRAM

HY62WT08081E Series
ORDERING INFORMATION
Part No.
Speed
4.5~5.5V 2.7~3.6V
HY62WT08081E-DPC
HY62WT08081E-DPE
HY62WT08081E-DPI
HY62WT08081E-DGC
HY62WT08081E-DGE
55/70
70*/85
HY62WT08081E-DGI
HY62WT08081E-DTC
HY62WT08081E-DTE
HY62WT08081E-DTI
Note * 70ns is available with 30pF test load
Power
LL-part
Temp
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
Package
PDIP
SOP
TSOP-I Standard
ABSOLUTE MAXIMUM RATING (1)
Symbol
Parameter
Rating
Unit
Vcc, VIN, VOUT Power Supply,
4.5~5.5V
-0.3 to 7.0
V
Input/Output Voltage
2.7~3.6V
-0.3 to 4.6
V
TA
Operating Temperature HY62WT08081E-C
0 to 70
°C
HY62WT08081E-E
-25 to 85
°C
HY62WT08081E-I
-40 to 85
°C
TSTG
Storage Temperature
-65 to 150
°C
PD
Power Dissipation
1.0
W
IOUT
Data Output Current
50
mA
TSOLDER
Lead Soldering Temperature & Time
260 •10
°C•sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
Rev 04 / May. 2001
2