HY62WT08081E Datasheet, PDF (4/13 Pages) Hynix Semiconductor – HY62WT08081E Series 32Kx8bit CMOS SRAM

HY62WT08081E Series
RECOMMENDED DC OPERATING CONDITIONS
Vcc = 4.5~5.5V
Symbol
Parameter
Min.
Vcc
Power Supply Voltage
4.5
Vss
Ground
0
VIH
Input High Voltage
2.2
VIL
Input Low Voltage
-0.3(1)
Note1. VIL = -3.0V for pulse width less than 50ns
Typ.
5.0
0
-
-
Max.
5.5
0
Vcc+0.3
0.8
Unit
V
V
V
V
Vcc = 2.7~3.6V
Symbol
Parameter
Min.
Typ.
Vcc
Power Supply Voltage
2.7
3.0/3.3
Vss
Ground
0
0
VIH
Input High Voltage
2.2
-
VIL
Input Low Voltage
-0.3(1)
-
Note1. VIL = -1.5V for pulse width less than 50ns
Max.
3.6
0
Vcc+0.3
0.6
Unit
V
V
V
V
TRUTH TABLE
/CS /WE /OE
Mode
H
X X Standby
L
H H Output Disabled
L
H L Read
L
L X Write
Note
1. H=VIH, L=VIL, X=Don't Care
I/O Operation
High-Z
High-Z
Data Out
Data In
Rev 04 / May. 2001
3