AMIS-720233 Datasheet, PDF (8/12 Pages) AMI SEMICONDUCTOR – Contact Image Sensor

AMIS-720233-B: Contact Image Sensor
Data Sheet
7.0 Recommended Operating Conditions at Room Temperature
Table 4: Recommended Operating Conditions at Room Temperature
Parameters
Symbol
Min.
Typ.
Max.
Units
Power supply
Input clock pulses high level
Input clock pulse low level
Operating high level exposed output
Clock frequency
Clock pulse duty cycle
VDD
Vih ⁽¹⁾
Vil ⁽¹⁾
IOUT ⁽²⁾
Fclk ⁽³⁾
Duty ⁽⁴⁾
4.5
5.0
3.0
5.0
0
0
See Note 2
0.1
2.0
25
5.5
VDD
0.8
5.0
V
V
V
MHz
%
Clock pulse high durations
tw
0.125
µsec
Integration time
Operating temperature
Tint
0.864
10
ms
Top
25
50
°_C
Notes:
1. Applies to both CP and SP
2. The output is a current that is proportional to the charges, which are integrated on the phototransistor’s base via photon-to-electron conversion. For its conversion
to voltage pixels see Figure 4.
3. Although the clock frequency, Fclk, will operate the device at less than 100kHz, it is recommended that the device be operated above 500kHz to avoid
complication of leakage current build-up. In applications using long CIS module length, such as an array of image sensor > 27, increases in the readout time, i.e.,
increases tint, hence, leakage current build-up occurs.
4. The clock duty cycle is normally set to 25 percent. However, it can operate with duty cycle as large as 50 percent, which will allow more reset time at the expense
of video pixel readout time.
AMI Semiconductor –May 06, M-20567-001
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