AMIS-30660 Datasheet, PDF (8/11 Pages) AMI SEMICONDUCTOR – High Speed CAN Transceiver

AMIS-30660 High Speed CAN Transceiver
Data Sheet
Symbol
Parameter
Conditions
Min
Type
Max
Unit
Ri(cm)(m)
Matching between
VCANH =VCANL
-3
0
+3
%
pin CANH and pin CANL
common mode input resistance
Ri(dif)
Differential input resistance
25
50
75
KΩ
Ci(CANH)
Input capacitance at
VTXD =VCC; not tested
7.5
20
pF
pin CANH
Ci(CANL)
Input capacitance at
VTXD =VCC; not tested
7.5
20
pF
pin CANL
Ci(dif)
Differential input capacitance
VTXD =VCC; not tested
3.75
10
pF
ILI(CANH)
Input leakage current at
VCC =0V; VCANH = 5V
10
170
250
µA
pin CANH
ILI(CANL)
Input leakage current at
VCC =0V; VCANL = 5V
10
170
250
µA
pin CANL
VCM-peak
Common-mode peak during
See Fig. 8 & Fig. 9
-500
500
mV
transition from dom ➔ rec or
rec ➔ dom
VCM-step
Difference in common-mode
See Fig. 8 & Fig. 9
-150
150
mV
between dom and
recessive state
Power On Reset
PORL
POR level
CANH, CANL, Vref in
2.2
3.5
4.7
V
tri-state below POR level
Thermal shutdown
Tj(sd)
Shutdown junction
150
160
180
°C
temperature
Timing characteristics (see Figs.6 and 7)
td(TXD-BUSon) Delay TXD to bus active
VS = 0V
40
85
110
ns
td(TXD-BUSoff) Delay TXD to bus inactive
VS = 0V
30
60
110
ns
td(BUSon-RXD) Delay bus active to RXD
VS = 0V
25
55
110
ns
td(BUSoff-RXD) Delay bus inactive to RXD
VS = 0V
65
110
135
ns
tpd(rec-dom)
Propagation delay TXD to RXD
VS = 0V
100
230
ns
from recessive to dominant
td(dom-rec)
Propagation delay TXD to RXD
VS = 0V
100
245
ns
from dominant to recessive
AMIS-
30660
Figure 4 – Test circuit for automotive transients
Hysteresis
Figure 5 – Hysteresis of the receiver
AMI Semiconductor
www.amis.com
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