AMIS-30660 Datasheet, PDF (6/11 Pages) AMI SEMICONDUCTOR – High Speed CAN Transceiver

AMIS-30660 High Speed CAN Transceiver
8.0 Electrical Characteristics
8.1 Definitions
All voltages are referenced to GND (pin 2).
Positive currents flow into the IC. Sinking current means
that the current is flowing into the pin. Sourcing current
means that the current is flowing out of the pin.
8.2 Absolute maximum ratings
Stresses above those listed in the following table may cause
permanent device failure. Exposure to absolute maximum
ratings for extended periods may effect device reliability.
Table 2 : Absolute maximum ratings
Symbol
VCC
VCANH
VCANL
VTXD
VRXD
Vref
VS
Vtran(CANH)
Vtran(CANL)
Vesd
Latch-up
Tstg
Tamb
Tjunc
Parameter
Supply voltage
DC voltage at pin CANH
DC voltage at pin CANL
DC voltage at pin TXD
DC voltage at pin RXD
DC voltage at pin Vref
DC voltage at pin S
Transient voltage at pin CANH
Transient voltage at pin CANL
Electrostatic discharge voltage
at all pins
Static latch-up at all pins
Storage temperature
Ambient temperature
Maximum junction temperature
Conditions
0 < VCC < 5.25V;
no time limit
0 < VCC < 5.25V;
no time limit
Note 1
Note 1
Note 2
Note 4
Note 3
-40
Min Max
Unit
-0.3 +7
V
-45^* +45^*
V
-45^* +45^*
V
-0.3 VCC+ 0.3 V
-0.3 VCC + 0.3 V
-0.3 VCC + 0.3 V
-0.3 VCC + 0.3 V
-150 +150
V
-150 +150
V
-4000 +4000
V
-500 +500
V
100
mA
-55 +150
°C
-40 +125
°C
+150 °C
* -85V min & +60V max also possible, please contact your local sales representative for details.
Notes
Note 1) Applied transient waveforms in accordance with “ISO 7637 part 3”, test pulses 1, 2, 3a and
3b (see Fig.4).
Note 2) Standardized Human Body Model ESD pulses in accordance to MIL883 method 3015.
Note 3) Static latch-up immunity: Static latch-up protection level when tested according to
EIA/JESD78.
Note 4) Standardized Charged Device Model ESD pulses when tested according to EOS/ESD
DS5.3-1993.
Thermal Characteristcs
Symbol
Rth(vj-a)
Rth(vj-s)
Parameter
Thermal resistance from junction to
ambient in SO8 package (2 layer PCB)
Thermal resistance from junction to
substrate of bare die
Conditions
In free air
In free air
Value
Unit
150
K/W
45
K/W
Data Sheet
AMI Semiconductor
www.amis.com
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