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N256S08XXHDA Datasheet, PDF (3/15 Pages) AMI SEMICONDUCTOR – 256Kb Low Power Serial SRAMs 32K × 8 bit Organization
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AMI Semiconductor, Inc.
N256S0818HDA/N256S0830HDA
Advance Information
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
–0.3 to VCC+0.3
V
Voltage on VCC Supply Relative to VSS
VCC
–0.3 to 4.5
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
–40 to 125
oC
Operating Temperature
TA
-40 to +85
oC
Soldering Temperature and Time
TSOLDER
260oC, 10sec
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Supply Voltage
VCC
Supply Voltage
VCC
Input High Voltage
VIH
Input Low Voltage
VIL
Output High Voltage
VOH
Output Low Voltage
VOL
Input Leakage Current
ILI
Output Leakage Current ILO
Read/Write Operating
Current
ICC1
ICC2
ICC3
Standby Current
ISB
1.8V Device
3V Device
IOH = -0.4mA
IOL = 1mA
CS = VCC, VIN = 0 to VCC
CS = VCC, VOUT = 0 to VCC
F = 1MHz, IOUT = 0
F = 10MHz, IOUT = 0
F = 20/25MHz, IOUT = 0
1.8V Device
CS = VCC, VIN = VSS or VCC
3V Device
CS = VCC, VIN = VSS or VCC
1.7
2.3
0.7 x VCC
–0.3
VCC–0.5
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and are not 100% tested.
Typ1
200
1
Max Unit
1.95 V
3.6
V
VCC+0.3 V
0.3 x VCC V
V
0.2
V
0.5
µA
0.5
µA
500 µA
4
mA
8/10 mA
500 nA
3
µA
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN
VIN = 0V, f = 1 MHz, TA = 25oC
CI/O
VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
7
pF
7
pF
3
This is a developmental specification and is subject to change without notice.
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