English
Language : 

N256S08XXHDA Datasheet, PDF (1/15 Pages) AMI SEMICONDUCTOR – 256Kb Low Power Serial SRAMs 32K × 8 bit Organization
AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
N256S0818HDA/N256S0830HDA
Advance Information
256Kb Low Power Serial SRAMs
32K × 8 bit Organization
Overview
The AMI Semiconductor serial SRAM family
includes several integrated memory devices
including this 256Kb serially accessed Static
Random Access Memory, internally organized as
32K words by 8 bits. The devices are designed and
fabricated using AMI’s advanced CMOS
technology to provide both high-speed
performance and low power. The devices operate
with a single chip select (CS) input and use a
simple Serial Peripheral Interface (SPI) serial bus.
A single data in and data out line is used along with
a clock to access data within the devices. The
N256S08xxHDA devices include a HOLD pin that
allows communication to the device to be paused.
While paused, input transitions will be ignored.
The devices can operate over a wide temperature
range of -40oC to +85oC and can be available in
several standard package offerings.
Features
• Power Supply Options
1.8V to 3.6V
• Very low standby current
As low as 200nA
• Very low operating current
As low as 500uA
• Simple memory control
Single chip select (CS)
Serial input (SI) and serial output (SO)
• Flexible operating modes
Word read and write
Page mode (32 word page)
Burst mode (full array)
• Organization
32K x 8 bit
• Self timed write cycles
• Built-in write protection (CS high)
• HOLD pin for pausing communication
• High reliability
Unlimited write cycles
• RoHS Compliant Packages
Green SOIC and TSSOP
Device Options
Part Number
N256S0818HDA
N256S0830HDA
Density
256Kb
Power
Supply (V)
1.8
3.0
Speed
(MHz)
20
25
Feature
HOLD
Typical
Standby
Current
200nA
1uA
Read/Write
Operating Current
500 uA @ 1Mhz
1
This is a developmental specification and is subject to change without notice.