N256S08XXHDA Datasheet, PDF (10/15 Pages) AMI SEMICONDUCTOR – 256Kb Low Power Serial SRAMs 32K × 8 bit Organization

AMI Semiconductor, Inc.
Page and Burst WRITE Sequence
CS
N256S0818HDA/N256S0830HDA
Advance Information
SCK _{0 1 2 3 4 5 6 7 8 9 10 11 21 22 23 24 25 26 27 28 29 30 31}
Instruction
16-bit address
SI _{0 0 0 0 0 0 1 0 15 14 13 12}
21076543210
ADDR 1
Data In to ADDR 1
SO
High-Z
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Data In to ADDR 2
Data In to ADDR 3
Data In to ADDR n
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 ... 7 6 5 4 3 2 1 0
High-Z
Page WRITE Sequence
SI
16-bit address
Page address (X)
Word address (Y)
SO
Data Words: sequential, at the end of the page the
address wraps back to the beginning of the page
Page X
Word Y
Page X Page X
Word Y+1 Word Y+2
High-Z
Page X Page X
Word 31 Word 0
Page X
Word 1
Burst WRITE Sequence
SI
16-bit address
Page address (X)
Word address (Y)
SO
...
...
Page X Page X
Word Y Word Y+1
Page X Page X
Word 31 Word 0
Page X
Word 1
Page X Page X+1 Page X+1
Word Y-1 Word Y Word Y+1
Data Words: sequential, at the end of the page the address wraps to the beginning of the page and
continues incrementing up to the starting word address. At that time, the address increments to the
next page and the burst continues.
High-Z
10
This is a developmental specification and is subject to change without notice.