PC28F256P30TFA Datasheet, PDF (55/95 Pages) Micron Technology – Micron Parallel NOR Flash Embedded Memory (P30-65nm)

256Mb and 512Mb (256Mb/256Mb), P30-65nm
Common Flash Interface
Table 25: System Interface Information
Hex
Offset
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Length
1
1
1
1
1
1
1
1
1
1
1
1
Description
V_CC logic supply minimum program/erase voltage.
bits 0 - 3 BCD 100 mV
bits 4 - 7 BCD volts
V_CC logic supply maximum program/erase volt-
age.
bits 0 - 3 BCD 100 mV
bits 4 - 7 BCD volts
V_PP [programming] supply minimum program/
erase voltage.
bits 0 - 3 BCD 100 mV
bits 4 - 7 hex volts
V_PP [programming] supply maximum program/
erase voltage.
bits 0 - 3 BCD 100 mV
bits 4 - 7 hex volts
“n” such that typical single word program time-
out = 2ⁿ μs.
“n” such that typical full buffer write timeout =
2ⁿ μs.
“n” such that typical block erase timeout = 2ⁿ ms.
“n” such that typical full chip erase timeout = 2ⁿ
ms.
“n” such that maximum word program timeout =
2ⁿ times typical.
“n” such that maximum buffer write timeout =
2ⁿ times typical.
“n” such that maximum block erase timeout = 2ⁿ
times typical.
“n” such that maximum chip erase timeout = 2ⁿ
times typical.
Address
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Hex
Code
- -17
- -20
- -85
- -95
- -09
- -0A
- -0A
- -00
- -01
- -02
- -02
- -00
ASCII Value
(DQ[7:0])
1.7V
2.0V
8.5V
9.5V
512µs
1024µs
1s
NA
1024µs
4096µs
4s
NA
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. A 1/13 EN
55
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.