AMG-PI004 Datasheet, PDF (7/20 Pages) alpha microelectronics gmbh – H-Bridge/Full Bridge Array of P and N channel MOSFETs

AMG-PI004
H-Bridge/Full Bridge Array of P and N channel MOSFETs
8.3. P-Channel Electrical Characteristics
Tj = 25°C unless otherwise noted
# Symbol Parameter
Off Characteristics
1 BVDSS Drain-Source Breakdown
2 _△BVDSS BVDSS Temp. Coefficient
/△TJ
Conditions
VGS=0V , ID=250uA
Reference to 25℃ ,
ID=-1mA
Min Typ Max Unit
-60 -
-
V
- -0.03 - V/℃
3 IDSS
Drain-Source Leakage
Current
4 IGSS
Gate-Source Leakage
On Characteristics
1
VGS(th)
Gate Threshold Voltage
2 △VGS(th) _{VGS(th) Temp. Coefficient}
VDS=-48V , VGS=0V, TJ=25℃ -
VDS=-48V , VGS=0V, TJ=55℃ -
VGS=±20V, VDS=0V
-
- 1 uA
-5
- ±100 nA
VGS=VDS, ID =-250uA
-1.5 - -3.0 V
- 4.56 - mV/℃
3 RDS(ON) _{Static Drain-Source On-}
VGS=-10V , ID=-4A
-
Resistance²
VGS=-4.5V , ID=-3A
-
4 gfs
Forward Transconductance VDS=-5V , ID=-3A
-
Dynamic Characteristics
1
Ciss
Input Capacitance
VDS=-15V, VGS=0V,
-
2
Coss
Output Capacitance
f=1MHz
-
3
Crss
Reverse Transfer
-
Capacitance
Switching Characteristics
1 Rg
2 Qg
3 Qgs
4 Qgd
Gate Resistance
VDS=0V, VGS=0V, f=1MHz
-
Total Gate Charge (-4.5)
VDS=-48V, VGS=-4.5V,
-
Gate-Source Charge
ID=-3A
-
Gate Charge
-
5
Td(on)
6 Tr
7
Td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VDD=-15V, VGS=-10V ,
-
RG=3.3Ω ID=-1A
-
-
8 Tf
Fall Time
-
Drain- Diode Characteristics and Maximum Ratings
1 Is
Continuous Source Current^1,6 VG=VD=0V,
-
2 ISM
Pulsed Source Current^2,6
Force Current
-
3 VSD
Diode Forward Voltage²
VGS=0V , IS-1A , TJ=25℃
-
Note(s):
1. The data tested by surface mounted on a 1 inch² FR-4 with 2OZ copper.
60 80 MΩ
73 90
15 -
S
1447 - pF
97.3 -
70 -
21 42 Ω
9.86 -
3.08 -
nC
2.95 -
28.8 -
19.8 -
ns
60.8 -
7.2 -
- -4.2 A
- -10.5 A
- -1.2 V
AMG-PI004 Revision: B
06.11.12
© All rights reserved Page 7 of 20