AMG-PI004 Datasheet, PDF (6/20 Pages) alpha microelectronics gmbh – H-Bridge/Full Bridge Array of P and N channel MOSFETs

AMG-PI004
H-Bridge/Full Bridge Array of P and N channel MOSFETs
# Symbol Parameter
Conditions
Min Typ Max Unit
2 RDS(ON)
Static Drain-Source On-
Resistance²
VGS=10V , ID=5A
VGS=4.5V , ID=4A
- 34 40 mΩ
- 37 48
3 gfs
Forward Transconductance
VDS=5V , ID=4A
- 28 - S
Dynamic Characteristics
1 Ciss
2 Coss
3 Crss
Input Capacitance
Output Cap
Reverse Transfer Capacitance
VDS=15V, VGS=0V,
f=1MHz
- 1378 -
- 86 - ^pF
- 64 -
Switching Characteristics
1 Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz - 3.2 6.4 Ω
2 Qg
Total Gate Charge (4.5V)
VDS=48V, VGS=4.5V, ID=4A - 12.6 - nC
3 Qgs
Gate-Source Charge
- 3.2 -
4 Qgd
Gate-Drain Charge
VDS=48V, VGS=4.5V, ID=4A - 6.3 - nC
5 Td(on)
6 Tr
7 Td(off)
Turn-On Delay Time
Rise Time
Turn-off Delay Time
VDD=30V , VGS=10V
RG=3.3Ω ID=4A
-8
- 14.2
- 24.4
-
- ^ns
-
8 Tf
Fall Time
- 4.6 -
Drain-Source Diode Characteristics and Maximum Ratings
1 IS
Continuous Source Current^1,4
VG=VD=0V , Force Current - - 5.1 A
2 ISM
Pulsed Source Current^2,4
- - 12 A
3 VSD
Diode Forward Voltage^²
VGS=0V , IS=1A , TJ=25℃
-
- 1.2 V
Note(s):
1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≦ 300us , duty cycle ≦ 2%
3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V, L=0.1mH, IAS=22.6A
4. The power dissipation is limited by 150℃ junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power
dissipation.
AMG-PI004 Revision: B
06.11.12
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