AMG-PI004 Datasheet, PDF (5/20 Pages) alpha microelectronics gmbh – H-Bridge/Full Bridge Array of P and N channel MOSFETs

AMG-PI004
H-Bridge/Full Bridge Array of P and N channel MOSFETs
7. Absolute Maximum Ratings
The Absolute Maximum Ratings may not be exceeded under any circumstances.
# Symbol Parameter
1
VDS
Drain-Source Voltage
2 ID
Drain Current - Continuous @VGS=10V @TC=25℃
3
IDM
4
VGS
5 PD
6
TJ, TSTG
Note(s): none
Drain Current - Continuous @ VGS=10V1、TC=70℃
Pulsed Drain Current²
Gate-Source Voltage
Power Dissipation⁴ (TC= 25°C)
Operating and Storage Temperature Range
N-CH P-Ch Unit
60
-60 V
5.1 -4.2 A
4.2 -3.5 A
15
-12 A
± 20 ± 20 V
2.2 2.2 W
-55 to 150
℃
8. Electrical Characteristics
8.1. Thermal Data
# Symbol Parameter
1
RθJA
Thermal Resistance Junction-ambient ¹
2
RθJC
Thermal Resistance Junction-Case¹
8.2. N-Channel Electrical Characteristics
Tj = 25°C unless otherwise noted
# Symbol Parameter
Off Characteristics
1 BVDSS
Drain-Source Breakdown
2 △BVDSS
/△TJ
BVDSS Temperature Coefficient
3 IDSS
Drain-Source Leakage Current
4 IGSS
Gate-Source Leakage Current
On Characteristics
1 VGS(th)
Gate Threshold Voltage
2 △VGS(th) _{VGS(th) Temperature Coefficient}
Conditions
VGS=0V , ID=250uA
Reference to 25℃ ,
ID=1mA
VDS=48V , VGS=0V ,
TJ=25℃
VDS=48V , VGS=0V ,
TJ=55℃
VGS=±20V , VDS=0V
VGS=VDS, ID=250uA
Typ
Max
Unit
-
328.15 K/W
-
277.15 K/W
Min Typ Max Unit
60 -
-V
- 0,06 - V/℃
3
- - 1 uA
-- 5
- - ±100 nA
1,2 - 2,5 V
- -5.24 - ^mV/℃
AMG-PI004 Revision: B
06.11.12
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