EQ0321 Datasheet, PDF (5/20 Pages) Asahi Kasei Microsystems – Programmable linear Hall IC for 1 axis

[EQ0321]
6. Absolute Maximum Ratings
If the device is used in conditions exceeding below values, the device may be destroyed. Normal operations
are not guaranteed in such exceeding conditions.
Table 3. Absolute Maximum Ratings
Ta = 25 ^oC, unless otherwise specified.
Parameter
Symbol
Min.
Max.
Pin
Supply Voltage
V_DD
-0.3
6.0
Input Voltage
V_IN
-0.3
V_DD+0.3
Storage Temperature
Tstg
-40
125
Units
V
V
°C
7. Recommended Operating Conditions
Table 4. Recommended operating conditions
Parameter
Symbol
Conditions
Min. Typ.
Supply Voltage
V_DD
2.7
Operating Temperature Ta
-30
Range
Input M.F.D. Range
Bin (Note 1)
15
“B1-B2” Range
Bsub (Note 2)
-120
“B1+B2” Range
Badd (Note 2)
70
“(B1-B2) / (B1+B2)”
Bdiv (Note 2)
-0.7
Range
(Note 1) Magnetic Flux Density (M.F.D.) applied into one Hall element.
(Note 2) B1, B2 = the applied magnetic flux density of each Hall elements of the EQ0321.
Max.
5.5
85
150
120
250
0.7
Units
V
℃
mT
mT
mT
-
8. Electrical Characteristics
8.1 Analog Electrical Characteristics
Table 5. Analog Electrical Characteristics
V_DD = 2.7 ~ 5.5 V, Ta = 25 ^oC, GAIN = 2.4 and OFFSET=0mV, unless otherwise specified.
Parameter
Symbol
Conditions
Min. Typ. Max.
Standby Current
SIDD RSTN=V_SS,
5
Bsub=0mT, Badd=80mT
Consumption Current DIDD
RSTN=V_DD,
Bsub=0mT, Badd=80mT
5.5 7.5
Output Sensitivity
Vh
(Note 1)
28.5 30.0 31.5
Bsub=±8mT, Badd=80mT
Offset Voltage
VOUT0 Bsub=0mT, Badd=80mT
V_DD/2 V_DD/2 V_DD/2
-0.15
+0.15
Output High Saturation Vsath 100kΩ load against VSS
V_DD-0.3
V_DD
Voltage
Output Low Saturation Vsatl 100kΩ load against VDD
0
0.3
Voltage
Power On Time
tpon
(Note 2)
1
Bsub=0mT,Badd=80mT
Reset Release Time tRST (Note 2)
0.5
Units
µA
mA
mV/mT
V
V
V
ms
ms
MS1436-E-00
-5-
2013/04