EQ0321 Datasheet, PDF (11/20 Pages) Asahi Kasei Microsystems – Programmable linear Hall IC for 1 axis

[EQ0321]
V_OUT [mV] = { Bsub / Badd } × GAIN + OFFSET + VOUT0
Where,
Bsub [mT] = B1 - B2
Badd [mT] = B1 + B2
B1and B2 are the applied magnetic flux density of each Hall elements of the EQ0321.
GAIN and OFFSET are defined in Section 10.4 and 10.5. These are adjustable.
10.3 Serial interface
Users can read and write the setting data to EEPROM by 4-wire synchronous serial interface. Each command
has original operation code, address and data (8bit). Input and output data are synchronized with SCK. The
data are entered with a time when SCK rises, and outputted with a time when SCK falls.
Command
WRITE
READ
WREN
WRDI
Operation code
0000 x010
0000 x011
0000 x110
0000 x100
Table 9. Command Table
Address
Data
A7-A0
A7-A0
D7-D0 (in)
D7-D0 (out)
Note
Write EEPROM
Read EEPROM
EEPROM write enable
EEPROM write disable
x : Don’t care
Table 10. Memory Map
Memory Name
Address D7 D6 D5 D4 D3 D2 D1 D0
GAIN
00h
0
0 GA5 GA4 GA3 GA2 GA1 GA0
OFFSET
01h
0
0
0
0 OF3 OF2 OF1 OF0
(Note)Writing to address other than “00h” ~ “01h” is inhibited.
- 10.3.1 WREN (WRITE ENABLE) / WRDI (WRITE DISABLE)
EEPROM has two states, “write enable state” and “write disable state”. When WREN command is entered
the mode of EEPROM goes to “write enable state”. When the EQ0321 is powered on, the state is “write
disable state”.
CSN
SCK
SI
SO
123456 78
0 0 0 0×1 1 0
Hi-Z
×_×=₌ド_Dン_oト_n’・_tケ_caア_re
Figure 11. WREN command
MS1436-E-00
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2013/04