APT50GP60B2DF2 Datasheet, PDF (8/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

100
90
80
70
T_J = 150°C
60
50
40
T_J = 125°C
30
T_J = 25°C
20
T_J = -55°C
10
0
0
1
2
3
4
V_F, ANODE-TO-CATHODE VOLTAGE (V)
Figure 26. Forward Current vs. Forward Voltage
900
800
T_J = 125°C
V_R = 400V
700
60A
30A
600
500
15A
400
300
200
100
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 28. Reverse Recovery Charge vs. Current Rate of Change
1.4
1.2
1.0
t_rr
0.8
0.6 ^IRRM
0.4
Q_rr
t_rr
Q_rr
0.2
0.0
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 30. Dynamic Parameters vs. Junction Temperature
450
400
350
300
250
200
150
100
50
0
.3
1
10
100 200
V_R, REVERSE VOLTAGE (V)
Figure 32. Junction Capacitance vs. Reverse Voltage
APT50GP60B2DF2
120
100
60A
T_J = 125°C
V_R = 400V
80
30A
15A
60
40
20
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 27. Reverse Recovery Time vs. Current Rate of Change
25
T_J = 125°C
V_R = 400V
60A
20
15
30A
10
15A
5
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 29. Reverse Recovery Current vs. Current Rate of Change
60
Duty cycle = 0.5
T_J = 150°C
50
40
30
20
10
0
25
50
75
100 125 150
Case Temperature (°C)
Figure 31. Maximum Average Forward Current vs. CaseTemperature