APT50GP60B2DF2 Datasheet, PDF (7/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
APT50GP60B2DF2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions
APT50GP60B2DF2
UNIT
I_F(AV)
I_F(RMS)
I_FSM
Maximum Average Forward Current (T_C = 99°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
30
49
Amps
320
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_F
Forward Voltage
I_F = 50A
I_F = 100A
I_F = 50A, T_J = 125°C
2.6
3.6
Volts
1.9
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
t_rr
Reverse Recovery Time I_F = 1A, di_F/dt = -100A/µs, V_R = 30V, T_J = 25°C
-
21
ns
t_rr
Reverse Recovery Time
-
62
Q_rr
Reverse Recovery Charge
I_F = 30A, di_F/dt = -200A/µs
V_R = 400V, T_C = 25°C
-
65
nC
I_{RRM Maximum Reverse Recovery Current}
-
3
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
113
ns
I_F = 30A, di_F/dt = -200A/µs
V_R = 400V, T_C = 125°C
-
411
nC
-
7
-
Amps
t_rr
Reverse Recovery Time
-
49
Q_rr
Reverse Recovery Charge
I_F = 30A, di_F/dt = -1000A/µs
V_R = 400V, T_C = 125°C
-
704
I_{RRM Maximum Reverse Recovery Current}
-
22
ns
nC
Amps
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.70
0.9
0.60
0.50
0.7
0.40
0.5
0.30
Note:
0.3
t1
0.20
t2
0.10
0.1
SINGLE PULSE
Duty Factor D = ^t1/t2
0.05
0
10^-5
10^-4
10^-3
10^-2
Peak TJ = PDM x Z_θJC + TC
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Junction
temp (°C)
RC MODEL
Power
(watts)
0.378 °C/W
0.00232 J/°C
0.291 °C/W
0.110 J/°C
Case temperature (°C)
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL