APT50GP60B2DF2 Datasheet, PDF (1/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
APT50GP60^APB^T502^GPD^60BF^2D2^F2
600V
POWER MOS 7^® IGBT
T-Max^TM
The POWER MOS 7^® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
G
C
• Low Conduction Loss
• 200 kHz operation @ 400V, 28A
E
C
• Low Gate Charge
• 100 kHz operation @ 400V, 44A
• Ultrafast Tail Current shutoff • SSOA rated
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T_C = 25°C unless otherwise specified.
APT50GP60B2DF2 UNIT
V_CES
V_GE
V_GEM
I _C1
I _C2
I _CM
SSOA
P_D
T_J,T_STG
T_L
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current ⁷ @ T_C = 25°C
Continuous Collector Current @ T_C = 110°C
Pulsed Collector Current ¹ @ T_C = 150°C
Safe Operating Area @ T_J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
±30
100
72
190
190A@600V
625
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_CES Collector-Emitter Breakdown Voltage (V_GE = 0V, I_C = 500µA)
600
V_GE(TH) Gate Threshold Voltage (V_CE = V_GE, I _C = 1mA, T_j = 25°C)
3
4.5
6
Collector-Emitter On Voltage (V_GE = 15V, I_C = 50A, T_j = 25°C)
V_CE(ON)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 50A, T_j = 125°C)
2.2 2.7
2.1
I _CES
Collector Cut-off Current (V_CE = 600V, V_GE = 0V, T_j = 25°C) ²
Collector Cut-off Current (V_CE = 600V, V_GE = 0V, T_j = 125°C) ²
750
3000
I_GES Gate-Emitter Leakage Current (V_GE = ±20V)
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
µA
nA