APT50GP60B2DF2 Datasheet, PDF (5/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
10,000
Cies
5,000
1,000
500
Coes
100
50
Cres
10
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT50GP60B2DF2
200
180
160
140
120
100
180
160
140
120
0
0 100 200 300 400 500 600 700
V_CE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.20
0.16
0.12
0.08
0.04
0
10^-5
0.9
0.7
0.5
Note:
0.3
t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
210
0.0090806
0.0046253
100
Junction
Power
temp. ( ”C) _(Watts)
0.0192963
0.0021766
0.0658343
0.0142175
0.1055619
0.345873
Case temperature
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
50
T_J = 125°C
T_C = 75°C
D = 50 %
V_CE = 400V
R_G = 5 Ω
10
10 20 30 40 50 60 70 80 90 100
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
F_max = min(f_max1, f_{max 2} )
f _{max 1}
=
t _{d (on )}
+
0.05
t _r + t _{d(off )}
+
t_f
f_{max 2}
=
P_diss − P_cond
E_on2 + E_off
P_diss
=
T_J − T_C
R _θJC