APT20GF120BRD Datasheet, PDF (7/8 Pages) Advanced Power Technology – The Fast IGBT™ is a new generation of high voltage power IGBTs.

100
80
60
T_J = 150°C
40
T_J = 100°C
20
T_J = 25°C
T_J = -55°C
0
0
1
2
3
4
V_F, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 1, Forward Voltage Drop vs Forward Current
50
T_J = 100°C
V_R = 650V
40
60A
30A
30
15A
20
10
2400
2000
T_J = 100°C
V_R = 650V
1600
1200
APT20GF120BRD
60A
30A
800
15A
400
0
10
50 100
500 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 2, Reverse Recovery Charge vs Current Slew Rate
2.0
1.6
1.2
I_RRM
0.8
t_rr
0.4
Q_rr
t_rr
Q_rr
0
0
200 400 600 800 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 3, Reverse Recovery Current vs Current Slew Rate
250
T_J = 100°C
V_R = 650V
200
60A
30A
150
15A
100
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 4, Dynamic Parameters vs Junction Temperature
2000
1600
T_J = 100°C
V_R = 650V
I_F = 30A
V_fr
100
80
1200
60
800
40
50
0
0
200 400 600 800 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
1.0
D=0.5
0.5
0.2
0.1
0.05
0.01
0.1
0.05
0.02
0.01
SINGLE PULSE
0.005
400
20
t_fr
0
0
0
200 400 600 800 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
NOTE:
t₁
t₂
DUTY FACTOR D = t₁/t₂
PEAK T_J=P_DM x Z _JC + T_C
0.00110_-5
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTAVNRG,URLEAVREPRUSLESVEODLUTRAGATEIO(VNO(LSTESC) ONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration