APT20GF120BRD Datasheet, PDF (3/8 Pages) Advanced Power Technology – The Fast IGBT™ is a new generation of high voltage power IGBTs.

APT20GF120BRD
PRELIMINARY
Power dissipation
P_tot = ƒ(T_C)
parameter: T_j ≤ 150 °C
Collector current
I_C = ƒ(T_C)
parameter: V_GE ≥ 15 V , T_j ≤ 150 °C
220
32
W
180
P_tot
160
A
I_C
24
140
120
Y ₁₀₀
R ₈₀
A 60
40
IN ₂₀
0
IM 0 20 40 60 80 100 120 °C 160
T_C
L _{Safe operating area}
E ^I_C ^{= ƒ(V}_CE⁾
parameter: D = 0, T_C = 25°C , T_j ≤ 150 °C
PR ^{10 2}
t_p = 9.0µs
20
16
12
8
4
0
0 20 40 60 80 100 120 °C
T_C
Transient thermal impedance
Z_{th JC} = ƒ(t_p)
parameter: D = t_p / T
IGBT
10 ⁰
160
10 µs
A
I
C
10 ¹
100 µs
K/W
Z
thJC
10 ^-1
10 ⁰
10 ^-1
10 ⁰
10 ¹
1 ms
10 ms
DC
10 ²
10 ³
V
V_CE
10 ^-2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 ^-3
10 ^-5
10 ^-4
10 ^-3
10 ^-2
10 ^-1
t_p
s 10 ⁰
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