APT20GF120BRD Datasheet, PDF (4/8 Pages) Advanced Power Technology – The Fast IGBT™ is a new generation of high voltage power IGBTs.

APT20GF120BRD
PRELIMINARY
Typ. gate charge
V_GE = ƒ(Q_Gate)
parameter: I_{C puls} = 156AA
20
V
V_GE ¹⁶
14
600 V
12
Typ. capacitances
C = f (V_CE)
parameter: V_GE = 0 V, f = 1 MHz
10 ¹
800 V
nF
C
10 ⁰
CCi_is_es_s
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80
100
Q_Gate
10 ^-1
CCo_os_es_s
Cr_rs_es_s
10 ^-2
0
5 10 15 20 25 30 V 40
V_CE
Short circuit safe operating area
I_Csc = f (V_CE) , T_j = 150°C
parameter: V_GE = ± 15 V, t_sc ≤ 10 µs, L < 25 nH
Reverse biased safe operating area
I_Cpuls = f (V_CE) , T_j = 150°C
parameter: V_GE = 15 V
10
2.5
I_CsI_cC/_sI_cC/₍I_9C02°C)
6
I_CCppuullsse//II_CC1
1.5
4
1.0
2
0.5
0
0 200 400 600 800 1000 1200 V 1600
V_CE
0.0
0
200 400 600 800 1000 1200 V 1600
V_CE
EUROPE
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USA
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