APT20GF120BRD Datasheet, PDF (2/8 Pages) Advanced Power Technology – The Fast IGBT™ is a new generation of high voltage power IGBTs.

DYNAMIC CHARACTERISTICS (IGBT)
Symbol Characteristic
C_ies
C_oes
C_res
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ²
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ³
Turn-off Switching Energy
Total Switching Losses ³
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses ³
Forward Transconductance
Test Conditions
MIN
Capacitance
V_GE = 0V
V_CE = 25V
f = 1 MHz
Gate Charge
V_GE = 15V
V_CC = 0.5V_CES
I_C = I_C2
Resistive Switching (25°C)
V_GE = 15V
V_CC = 0.8V_CES
I_C = I_C2
R_G = 10Ω
Inductive Switching (150°C)
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
R_G = 10Ω
T_J = +150°C
Inductive Switching (25°C)
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
R_G = 10Ω
T_J = +25°C
V_CE = 20V, I_C = 15A
APT20GF120BRD
TYP MAX UNIT
1100 1500
165 250 pF
70 100
95 150
13
20
nC
55
85
17
75
ns
99
170
20
30
35
70
ns
190 275
90 135
1.2
1.8
mJ
3.0
20
35
ns
160
90
2.7
mJ
12
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol Characteristic
MIN
R_ΘJC
Junction to Case (IGBT)
Junction to Case (FRED)
R_ΘJA Junction to Ambient
W_T
Package Weight
Torque Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature.}
2 _{See MIL-STD-750 Method 3471}
3 _{Switching losses include the FRED and IGBT.}
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYP
0.22
6.1
MAX
0.63
0.90
40
10
1.1
UNIT
°C/W
oz
gm
lb•in
N•m