APT33GF120B2RD Datasheet, PDF (6/8 Pages) Advanced Power Technology – The Fast IGBT™ is a new generation of high voltage power IGBTs.

APT33GF120B2RD/LRD
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
MAXIMUM RATINGS (FRED)
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions
APT33GF120B2RD/LRD UNIT
V_R
Maximum D.C. Reverse Voltage
V_{RRM Maximum Peak Repetitive Reverse Voltage}
V_{RWM Maximum Working Peak Reverse Voltage}
I_F(AV) _{Maximum Average Forward Current (TC = 85°C, Duty Cycle = 0.5)}
I_F(RMS)
Y ^IFSM
RMS Forward Current
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
AR _{STATIC ELECTRICAL CHARACTERISTICS (FRED)}
IN ^{Symbol Characteristic / Test Conditions}
MIN
IM ^VF
Maximum Forward Voltage
I_F = 30A
I_F = 60A
I_F = 30A, T_J = 150°C
PREL ^{DYNAMIC CHARACTERISTICS (FRED)}
Symbol Characteristic
MIN
1200
30
70
210
Volts
Amps
TYP MAX UNIT
2.5
2.0
Volts
2.0
TYP MAX UNIT
t_rr1
t_rr2
t_rr3
t_fr1
t_fr2
I_RRM1
I_RRM2
Q_rr1
Q_rr2
V_fr1
V_fr2
diM / dt
Reverse Recovery Time, I_F = 1.0A, di_F/dt = -15A/µs, V_R = 30V, T_J = 25°C
Reverse Recovery Time
T_J = 25°C
I_F = 30A, di_F/dt = -240A/µs, V_R = 650V
T_J = 100°C
Forward Recovery Time
T_J = 25°C
I_F = 30A, di_F/dt = 240A/µs, V_R = 650V
T_J = 100°C
Reverse Recovery Current
T_J = 25°C
I_F = 30A, di_F/dt = -240A/µs, V_R = 650V
T_J = 100°C
Recovery Charge
T_J = 25°C
I_F = 30A, di_F/dt = -240A/µs, V_R = 650V
T_J = 100°C
Forward Recovery Voltage
T_J = 25°C
I_F = 30A, di_F/dt = 240A/µs, V_R = 650V
T_J = 100°C
Rate of Fall of Recovery Current
T_J = 25°C
I_F = 30A, di_F/dt = -240A/µs, V_R = 650V (See Figure 10)
T_J = 100°C
70
85
70
160
ns
255
255
7
12
Amps
12
20
660
nC
1640
15
Volts
20
245
A/µs
160