APT33GF120B2RD Datasheet, PDF (5/8 Pages) Advanced Power Technology – The Fast IGBT™ is a new generation of high voltage power IGBTs.

Typ. gate charge
V_GE = ƒ(Q_Gate)
parameter: I_{C puls} = ²25^6AA
20
V
V_GE ¹⁶
14
600 V
800 V
12
10
8
6
4
2
0
0 20 40 60 80 100 120 140 170
Q_Gate
Typ. capacitances
C = f (V_CE)
parameter: V_GE = 0 V, f = 1 MHz
10 ¹
nF
C
10 ⁰
CC_ii_es_ss
10 ^-1
CC_oo_es_ss
CC_rr_es_ss
10 ^-2
0
5 10 15 20 25 30 V 40
V_CE
Short circuit safe operating area
I_Csc = f (V_CE) , T_j = 150°C
parameter: V_GE = ± 15 V, t_sc ≤ 10 µs, L < 25 nH
Reverse biased safe operating area
I_Cpuls = f (V_CE) , T_j = 150°C
parameter: V_GE = 15 V
10
2.5
I_Csc/I_C(90°C)
6
I_Cpuls/I_C
1.5
4
1.0
2
0
0 200 400 600 800 1000 1200 V 1600
V_CE
0.5
0.0
0
200 400 600 800 1000 1200 V 1600
V_CE