APT33GF120B2RD Datasheet, PDF (2/8 Pages) Advanced Power Technology – The Fast IGBT™ is a new generation of high voltage power IGBTs.

DYNAMIC CHARACTERISTICS (IGBT)
Symbol Characteristic
C_ies
C_oes
C_res
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁴
Turn-off Switching Energy
Total Switching Losses ⁴
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses ⁴
Forward Transconductance
APT33GF120B2RD/LRD
Test Conditions
MIN TYP MAX UNIT
Capacitance
V_GE = 0V
V_CE = 25V
f = 1 MHz
Gate Charge
V_GE = 15V
V_CC = 0.5V_CES
I_C = I_C2
Resistive Switching (25°C)
V_GE = 15V
V_CC = 0.8V_CES
I_C = I_C2
R_G =10Ω
1650 2200
230 325 pF
110 160
165 250
20
30
nC
100 150
30
140
ns
155
200
28
Inductive Switching (150°C)
60
V_CLAMP(Peak) = 0.66V_CES
280
ns
V_GE = 15V
I_C = I_C2
30
R_G = 10Ω
3.0
T_J = +150°C
3.0
mJ
6.0
Inductive Switching (25°C)
28
V_CLAMP(Peak) = 0.66V_CES
70
V_GE = 15V
I_C = I_C2
ns
250
R_G = 10Ω
25
T_J = +25°C
5.0
mJ
V_CE = 20V, I_C = 25A
8.5
20
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol Characteristic
MIN
R_ΘJC
Junction to Case (IGBT)
Junction to Case (FRED)
R_ΘJA Junction to Ambient
W_T Package Weight
Torque Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature.}
2 _{Leakages include the FRED and IGBT.}
3 _{See MIL-STD-750 Method 3471}
4 _{Switching losses include the FRED and IGBT.}
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYP
0.22
6.1
MAX
0.42
0.90
40
10
1.1
UNIT
°C/W
oz
gm
lb•in
N•m