APT33GF120B2RD Datasheet, PDF (3/8 Pages) Advanced Power Technology – The Fast IGBT™ is a new generation of high voltage power IGBTs.

APT33GF120B2RD/LRD
PRELIMINARY
Power dissipation
P_tot = ƒ(T_C)
parameter: T_j ^≤ 150 °C
320
W
P_tot
240
200
160
120
80
40
0
0 20 40 60 80 100 120 °C 160
T_C
Collector current
I_C = ƒ(T_C)
parameter: V_GE ^≥ 15 V , T_j ^≤ 150 °C
55
A
I_C
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
T_C
Safe operating area
I_C = ƒ(V_CE)
parameter: D = 0, T_C = 25°C , T_j ^≤ 150 °C
10 ³
Transient thermal impedance
Z_{th JC} = ƒ(t_p)
parameter: D = t_p / T
IGBT
10 ⁰
A
I_{C 10 2}
10 ¹
10 ⁰
t_p = 2.0µs
10 µs
100 µs
1 ms
10 ms
10 ^-1
10 ⁰
10 ¹
DC
10 ²
10 ³
V
V_CE
K/W
Z_thJC
10 ^-1
10 ^-2
single pulse
10 ^-3
10 ^-5
10 ^-4
10 ^-3
10 ^-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 ^-1
t_p
s 10 ⁰
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