APT40GP60J Datasheet, PDF (5/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
10,000
5,000
Cies
1,000
500
100
50
10
Coes
Cres
0
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT40GP60J
180
160
140
120
100
80
60
40
20
0
0 100 200 300 400 500 600 700
V_CE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.45
0.40
0.9
0.35
0.7
0.30
0.25
0.20
0.15
0.10
0.05
0
10^-5
0.5
Note:
t1
0.3
t2
Duty Factor D = ^t1/t2
0.1
Peak TJ = PDM x Z_θJC + TC
0.05
SINGLE PULSE
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Junction
temp. ( ”C)
RC MODEL
0.109
0.0107F
Power
(Watts)
0.180
0.149F
Case temperature
0.151
1.22F
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
210
100
50
F_max = min(f_max1, f_{max 2} )
f _{max 1}
=
t _{d (on )}
+
0.05
t _r + t _{d(off )}
+
t_f
T_J = 125°C
T_C = 75°C
D = 50 %
f_{max 2}
=
P_diss − P_cond
E_on2 + E_off
V_CE = 400V
R_G = 5 Ω
10
P_diss
=
T_J − T_C
R _θJC
10
20
30
40
50
60
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current