APT40GP60J Datasheet, PDF (2/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_ies
C_oes
C_res
V_GEP
Q_g
Q_ge
Q_gc
SSOA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge ³
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching SOA
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ⁴
Turn-on Switching Energy (Diode) ⁵
Turn-off Switching Energy ⁶
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ⁴
Turn-on Switching Energy (Diode) ⁵
Turn-off Switching Energy ⁶
Test Conditions
MIN
Capacitance
V_GE = 0V, V_CE = 25V
f = 1 MHz
Gate Charge
V_GE = 15V
V_CE = 300V
I_C = 40A
T_J = 150°C, R_G = 5Ω, V_GE = 160
15V, L = 100µH,V_CE = 600V
Inductive Switching (25°C)
V_CC(Peak) = 400V
V_GE = 15V
I_C = 40A
R_G = 5Ω
T_J = +25°C
Inductive Switching (125°C)
V_CC(Peak) = 400V
V_GE = 15V
I_C = 40A
R_G = 5Ω
T_J = +125°C
TYP
4610
395
25
7.5
135
30
40
APT40GP60J
MAX UNIT
pF
V
nC
A
20
29
ns
64
45
385
644
µJ
352 450
20
29
ns
89
69
385
972
µJ
615 950
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R_ΘJC
R_ΘJC
W_T
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.44
°C/W
N/A
29.2 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I_ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E_on1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure24.)
5 E_on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E_on2 test circuit. (See Figures 21, 22.)
6 E_off is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.