APT40GP60J Datasheet, PDF (3/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
80
VGE = 15V.
250µs PULSE TEST
70 <0.5 % DUTY CYCLE
60
T_C=-55°C
50
40
30
20
T_C=125°C
10
T_C=25°C
0
0 0.5 1 1.5 2 2.5 3
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V_GE = 15V)
250
250µs PULSE TEST
<0.5 % DUTY CYCLE
200
150
100
TJ = -55°C
50
TJ = 25°C
TJ = 125°C
0
0 1 2 3 4 5 6 7 8 9 10
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.5
TJ = 25°C.
250µs PULSE TEST
3
I_C= 80A
<0.5 % DUTY CYCLE
2.5
I_C= 40A
2
I_C= 20A
1.5
1
0.5
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
80
VGE = 10V.
250µs PULSE TEST
70 <0.5 % DUTY CYCLE
60
T_C=-55°C
APT40GP60J
50
40
30
20
10
T_C=125°C
T_C=25°C
0
0 0.5 1 1.5 2 2.5 3
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V_GE = 10V)
16
I_C = 40A
14 ^{TJ = 25°C}
12
V_CE=120V
10
V_CE=300V
8
V_CE=480V
6
4
2
0
0 20 40 60 80 100 120 140
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3.5
VGE = 15V.
250µs PULSE TEST
3 ^{<0.5 % DUTY CYCLE}
I_C= 80A
2.5
2
I_C= 20A
1.5
I_C= 40A
1
0.5
0
-50 -25 0 25 50 75 100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
120
100
80
60
40
20
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature