APT40GP60J Datasheet, PDF (4/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

40
35
V_GE= 10V
30
25
V_GE= 15V
20
15
10
V_CE = 400V
T_J = 25°C, T_J =125°C
5
R_G = 5Ω
L = 100 µH
0
0
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
120
100
T_J = 25 or 125°C,V_GE = 10V
80
60
40
20
T_J = 25 or 125°C,V_GE = 15V
R_G =5Ω, L = 100µH, V_CE = 400V
0
0
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
3000
2500
V_CE = 400V
V_GE = +15V
R_G = 5 Ω
T_J =125°C, 15V
T_J =125°C,10V
2000
1500 ^{TJ = 25°C, 10V}
1000
500
T_J = 25°C, 15V
0
0
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
4000
3500
3000
V_CE = 400V
T_J = 125°C
V_GE = +15V
E_on2 80A
2500
2000
E_off 80A
1500
E_on2 40A
1000
E_off 40A
500
E_on2 20A
0
E_off20A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT40GP60J
100
V_GE =15V,T_J=125°C
80
V_GE =15V,T_J=25°C
V_GE =10V,T_J=125°C
60
40
V_GE =10V,T_J=25°C
20 _{VCE = 400V}
R_G = 5Ω
L = 100 µH
0
0
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
R_G =5Ω, L = 100µH, V_CE = 400V
T_J = 125°C, V_GE = 10V or 15V
80
60
40
20
T_J = 25°C, V_GE = 10V or 15V
0
0
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
2000
1500
V_CE = 400V
V_GE = +15V
R_G = 5 Ω
T_J = 125°C, V_GE = 10V or 15V
1000
500
0
T_J = 25°C, V_GE = 10V or 15V
0
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
3000
2500
V_CE = 400V
V_GE = +15V
R_G = 5 Ω
E_on2 80A
2000
1500 _{Eoff 80A}
1000
E_on2 40A
500 E_off 40A
E_on2 20A
0
E_off 20A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature